Data Science Statistical Approach to Percolative Conduction in Poly-Si Based 3D NAND Channels

We present an improved model for the simulation of the string current in 3D nand Flash cells, able to reproduce experimental data over a temperature range down to 100 K. Statistical results of the model were then explored using Data Science techniques, allowing to understand the dependence of the percolative behavior of the current on grain size and gate bias condition. This information is useful for poly-Si process optimization.

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Publication Details

Published
2025-09-24
DOI
https://doi.org/10.1109/sispad66650.2025.11186018
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
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article

Data Science Statistical Approach to Percolative Conduction in Poly-Si Based 3D NAND Channels

Advancements in Semiconductor Devices and Circuit Design
article

Data Science Statistical Approach to Percolative Conduction in Poly-Si Based 3D NAND Channels

article en

Abstract

We present an improved model for the simulation of the string current in 3D nand Flash cells, able to reproduce experimental data over a temperature range down to 100 K. Statistical results of the model were then explored using Data Science techniques, allowing to understand the dependence of the percolative behavior of the current on grain size and gate bias condition. This information is useful for poly-Si process optimization.

Micron (Italy) (IT), Politecnico di Milano (IT)
Openalex Percentile: Top 49%
Advancements in Semiconductor Devices and Circuit Design
DOISourceOpenAlex
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Data Science Statistical Approach to Percolative Conduction in Poly-Si Based 3D NAND Channels · (2025) | TGRS Research Map | TGRS