A Fully Depleted 52 μm GS CIS Pixel with 6 ns Charge Transfer, rms Read Noise, 80 μV/e- CG and >80 % VIS-QE

Imec is developing a CMOS compatible image sensors. Full depletion allows enhancement of the charge collection speed in photodetectors. A 48x48 pixel test array with 52 μm pitch has been developed in this technology. An initial evaluation is presented in this paper. The device achieves 7 e-rms read noise at 80 μV/e- conversion gain. The mean charge transfer time is estimated to 6 ns. QE in the visible is expected to be >80 %.

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Publication Details

Journal
IISS online library
Published
2025-10-23
DOI
https://doi.org/10.60928/atn9-tpr8
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
Field-Weighted Citation Impact
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article

A Fully Depleted 52 μm GS CIS Pixel with 6 ns Charge Transfer, rms Read Noise, 80 μV/e- CG and >80 % VIS-QE

IISS online library
CCD and CMOS Imaging Sensors
article

A Fully Depleted 52 μm GS CIS Pixel with 6 ns Charge Transfer, rms Read Noise, 80 μV/e- CG and >80 % VIS-QE

article en

Abstract

Imec is developing a CMOS compatible image sensors. Full depletion allows enhancement of the charge collection speed in photodetectors. A 48x48 pixel test array with 52 μm pitch has been developed in this technology. An initial evaluation is presented in this paper. The device achieves 7 e-rms read noise at 80 μV/e- conversion gain. The mean charge transfer time is estimated to 6 ns. QE in the visible is expected to be >80 %.

IISS online library
Vrije Universiteit Brussel (BE)
Affordable and clean energy
Openalex Percentile: Top 49%
CCD and CMOS Imaging Sensors
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A Fully Depleted 52 μm GS CIS Pixel with 6 ns Charge Transfer, rms Read Noise, 80 μV/e- CG and >80 % VIS-QE · IISS online library (2025) | TGRS Research Map | TGRS