Sliding‐Induced Out‐of‐Plane Ferroelectricity of 2D MnPS<sub>3</sub> (Adv. Funct. Mater. 42/2025)
Sliding-Induced Ferroelectricity In their Research Article (10.1002/adfm.202503780), Wenjun Chen, Changjiu Teng, Shilong Zhao, and co-workers report sliding-induced out-of-plane ferroelectricity of 2D MnPS3 at room temperature. By using 2D MnPS3 as the ferroelectric gate dielectric to assemble FeFET, which shows bipolar memory behaviors at ambient and cryogenic temperatures. This work paves a way to fabricate ferroelectric devices with multi-functionality for next-generation information storage.
Institutions
- Foshan University (CN)
- Tsinghua–Berkeley Shenzhen Institute (CN)
- Songshan Lake Materials Laboratory (CN)
- Tsinghua University (CN)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2025-10-01
- DOI
- https://doi.org/10.1002/adfm.71974
- Primary Topic
- Irish and British Studies
- Type
- article
- Field-Weighted Citation Impact
- 0.00