ANTIFERROMAGNETIC PROPERTIES OF LOW DIMENSIONAL MANGANESE DOPED ZINC TELLURIDE () DILUTED MAGNETIC SEMICONDUCTORS

ABSTRACT The interplay between the optical, electrical and magnetic properties of (++, ),+ diluted magnetic semiconductors (DMSs) is of fundamental interest and may enable future spinoptoelectronic devices. In order to enable to them useful for such devices efforts have been made to develop diluted magnetic semiconductors (DMS) in which small quantity of magnetic ion is introduced in to normal semiconductors. with face centered cubic structure and longrange antiferromagnetic ordering is investigated within the frame work of the Heisenberg model. The Hamiltonian includes exchange interactions with the nearest neighbors and Zeeman terms. Calculations are performed using Holstein-Primakoff transformation and Green’s function formalism. By using these techniques and model, we examine excited total number of magnon, equation of motion, dispersion relation, Temperature dependencies of reduced magnetization and linear concentration dependence of Neel temperature is also predicted. In the 3D case the magnetization decreases as power of two ( - ) with temperature and for the 2D and 1" it decreases by () with temperature.