Structural and Optical Properties of AlGaAs/GaAs Heterostructures Synthesized by Electrochemical Method

This poster presents the synthesis and characterization of AlGaAs/GaAs heterostructures obtained via an electrochemical route as a cost-effective and scalable alternative to conventional vacuum-based techniques (MBE, MOCVD). The study aims to optimize deposition parameters to control aluminum incorporation, surface morphology, and optoelectronic quality of the nanostructures. AlGaAs layers were grown on electrochemically textured n-type GaAs (111) substrates using three deposition regimes: (1) alternating voltage cycles, (2) gradual voltage increase, and (3) pulsed voltage regime. Morphological (SEM) and compositional (EDX) analyses reveal tunable aluminum incorporation from 12% to 27%, resulting in improved uniformity and reduced oxidation at higher Al content. Raman spectroscopy confirms enhanced crystallinity and reduced defect density in samples deposited under pulsed-voltage conditions. Photoluminescence spectra demonstrate defect-related emission at ~870 nm for low-Al samples and narrower, blue-shifted peaks (~840 nm) for optimized conditions, indicating improved material quality. The results demonstrate that the electrochemical synthesis allows fine-tuning of composition and structure, enabling the fabrication of high-quality AlGaAs/GaAs heterostructures for optoelectronic applications such as LEDs and laser diodes.Funding: Supported by the National Research Foundation of Ukraine, Project No. 0124U002023 “Design and research of oxide heterostructures for portable solar cells.”