CREATION OF NEW ELEMENTS OF SENSOR STRUCTURES OF INFORMATION AND MEASUREMENT SYSTEMS BASED ON SILICON MICROPROCESSING TECHNOLOGIES

Background. The main protective masking layers used in the formation of sensors of information-measurement systems by anisotropic etching of silicon are described. Such layers include films of silicon dioxide and nitride applied to the surface of silicon wafers before technological operations of anisotropic etching. Materials and methods. It is shown that when using combined masks consisting of at least two protective layers, it is possible to form silicon structures with sensors having a complex etching profile. This increases the manufacturability of the sensitive elements of micromechanical sensors, since the formation of the mask topology on the surface of silicon wafers leads to improved manufacturing quality and allows you to create new structures of sensitive sensor elements. Results and conclusions. These technical solutions make it possible to create new elements of sensor structures of information-measurement systems (IMS), as well as to increase the manufacturability of their manufacture.