Design of 220–250GHz Ultra Wideband Driver Amplifier
This article is based on the IHP 130nm SiGe HBT process, using a differential common source amplifier with four stage loaded neutralization capacitors to design an ultra wideband driver amplifier with a center frequency of 235GHz. Through this structure, the driver amplifier achieves a gain greater than 15dB, a return loss better than 10dB, and a relative bandwidth of 12.7% in the frequency range of 220–250GHz, meeting the ultra wideband application requirements of terahertz transmission and reception links.
Institutions
- University of Electronic Science and Technology of China (CN)
Publication Details
- Published
- 2025-07-23
- DOI
- https://doi.org/10.1109/imws-amp66175.2025.11183607
- Primary Topic
- Fungal and yeast genetics research
- Type
- article
- Field-Weighted Citation Impact
- 0.00