Impact of Total Ionizing Dose on the Electrical Performance of Silicon Carbide MOSFET

This study evaluates the total ionizing dose (TID) effects on 4H-SiC VDMOSFET, focusing on changes in threshold voltage, leakage current, on-resistance, and breakdown voltage under specified gate biases of -4V and +10V, and radiation doses up to 3 Mrad. The findings reveal pronounced negative shifts in threshold voltage particularly under a +10V bias, and a minor reduction in breakdown voltage. High-temperature annealing demonstrated a significant recovery in performance, more so than room-temperature annealing. TCAD simulations support the experimental outcomes, providing a deeper understanding of the radiation-induced degradation mechanisms, essential for enhancing the resilience of SiC devices in aerospace applications.