A 28-Gb/mm ² 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs

The challenge of evolving to create a memory that is shrinking compared to the previous generation while satisfying the high performance and low power required for flash memory has been present in every generation, but the recent rapid change to artificial intelligence (AI) trends is very tough, as the level of demand is increasing sharply. The IO speed required for PCs, mobile devices, and servers is rapidly increasing, and low power for large-capacity applications is also very important as it is directly related to performance. At the peak of this change, our tenth-generation <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nand</small> changed the structure to 3-D bonded vertical <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nand</small> (BV-NAND) and successfully developed high-density memory with three stacks of 4XX wordline (WL) and zero dummy hole. The highest IO speed of 5.6 Gb/s and the extremely low power are also achievements.