Optically Active Defect Engineering via Plasma Treatment in a MIS‐Type 2D Heterostructure (Adv. Mater. Interfaces 29/2024)

Defect Engineering Thanks to the existence of photo-active defect states in h-BN, an effective type-II band alignment between h-BN and WS2 monolayer is formed under 520 laser irradiations. In article 2400288 by Xue Liu and co-workers, such lattice defects were intentionally introduced in the h-BN layer by controlled inductively coupled plasma (ICP) treatment, which provide more driving force for the separation of electron-hole pairs in WS2 under laser irradiation, and promote the motion of charge carriers at the WS2/ h-BN interface.