Toward AI-ready hardware: review of single-crystal halide perovskite FET fabrication and performance
This article explores the latest developments in single-crystal halide perovskite field-effect transistors (FETs), focusing specifically on methods to mitigate ion migration and achieve stable operation at room temperature.
Institutions
- Sejong University (KR)
Publication Details
- Journal
- Materials Advances
- Published
- 2025-10-03
- DOI
- https://doi.org/10.1039/d5ma00713e
- Primary Topic
- Vector-borne infectious diseases
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Research Foundation
- National Research Foundation of Korea
- Ministry of Science and ICT, South Korea