A Filtering Class-B/J High-Efficiency RF-DC Rectifier Based on GaN Transistor

This letter presents a novel filtering high-efficiency transistor-based rectifier operating in continuous class-B/J mode. The proposed design incorporates a filter structure into the transistor-based RF-dc rectifier to suppress out-of-band frequency components, thus improving the rectification efficiency. Detailed analysis of the filter structure is presented, and key design parameters are obtained to realize the filtering function. For validation, a filtering rectifier is designed and measured based on a GaN HEMT CGH40010F. Experiments show that within the 2.3–2.6 GHz operating frequency range, the rectifier achieves a peak rectification efficiency over 80% when a dc load of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$105~\Omega $</tex-math> </inline-formula>, a gate voltage of −3 V, and an input power of 40 dBm are employed. To the best of the authors’ knowledge, this letter, for the first time, realizes a transistor-based rectifier with out-of-band suppression capability.