Large superconducting diode effect driven by edge states in twisted iron-chalcogenide Josephson junctions

The superconducting diode effect (SDE)-the unidirectional, dissipationless flow of supercurrent-is a critical element for future superconducting electronics. Achieving high efficiency under zero magnetic field is a key requirement. The Josephson junction constitutes a versatile SDE platform for exploiting quantum materials that exhibit ferromagnetism, topology, or unconventional superconductivity. However, a single two-dimensional material system that inherently offers these properties and allows for precise interface engineering, such as twisting, remains elusive. Here we report a record-high, field-free diode efficiency of ~30% in twist van der Waals Josephson heterostructures of the sign-change iron-chalcogenide superconductor FeTe0.55Se0.45 and the conventional transition-metal dichalcogenide superconductor 2H-NbSe2. The diode response shows a striking twist-angle dependence: the efficiency peaks at crystallographic alignment and collapses with a small misorientation of ~7 deg. Importantly, the twist-angle evolution of superconducting interference measurements reveals that efficient nonreciprocity arises from asymmetric edge supercurrents, whereas bulk transport suppresses the effect. These findings establish edge states as the driving mechanism of the unconventional SDE, linking it to exotic pairing and topology in multiband iron-based superconductors. Our findings reveal intricate physics involving novel pairing symmetry, magnetism, and topology in the multiband iron-based superconductor, and offer a new route to high-performance superconducting diodes.

Publication Details

Journal
ArXiv.org
Published
2025-10-01
Primary Topic
Air Traffic Management and Optimization
Type
article
Field-Weighted Citation Impact
0.00

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article

Large superconducting diode effect driven by edge states in twisted iron-chalcogenide Josephson junctions

ArXiv.org
Air Traffic Management and Optimization
article

Large superconducting diode effect driven by edge states in twisted iron-chalcogenide Josephson junctions

article en

Abstract

The superconducting diode effect (SDE)-the unidirectional, dissipationless flow of supercurrent-is a critical element for future superconducting electronics. Achieving high efficiency under zero magnetic field is a key requirement. The Josephson junction constitutes a versatile SDE platform for exploiting quantum materials that exhibit ferromagnetism, topology, or unconventional superconductivity. However, a single two-dimensional material system that inherently offers these properties and allows for precise interface engineering, such as twisting, remains elusive. Here we report a record-high, field-free diode efficiency of ~30% in twist van der Waals Josephson heterostructures of the sign-change iron-chalcogenide superconductor FeTe0.55Se0.45 and the conventional transition-metal dichalcogenide superconductor 2H-NbSe2. The diode response shows a striking twist-angle dependence: the efficiency peaks at crystallographic alignment and collapses with a small misorientation of ~7 deg. Importantly, the twist-angle evolution of superconducting interference measurements reveals that efficient nonreciprocity arises from asymmetric edge supercurrents, whereas bulk transport suppresses the effect. These findings establish edge states as the driving mechanism of the unconventional SDE, linking it to exotic pairing and topology in multiband iron-based superconductors. Our findings reveal intricate physics involving novel pairing symmetry, magnetism, and topology in the multiband iron-based superconductor, and offer a new route to high-performance superconducting diodes.

ArXiv.org
Salt Science Research Foundation, National Natural Science Foundation of China, Fudan University, Brookhaven National Laboratory
Openalex Percentile: Top 35%
Air Traffic Management and Optimization
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Large superconducting diode effect driven by edge states in twisted iron-chalcogenide Josephson junctions · ArXiv.org (2025) | TGRS Research Map | TGRS