Experimental Estimation of Intercorrelation Between Radiation Effects and Semiconductor Detectors Measuring Characteristics Used for Static Radiation Detection of Nuclear Reactors

In 2024, some studies were conducted to evaluate the intercorrelation between radiation effects and the sensitivity parameters of semiconductor detectors. Those studies were made within the frame of the work on metrological support developing for radiation testing of the devices and units for measuring the integral characteristics radiation fields of nuclear reactors operating in static mode. The mission was to research the effect of the pattern and sequence of irradiation with an increased dose load on the metrological characteristics of semiconductor detectors. In a first approximation, the dose dependence of gain factor H<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21E(Dγ)</inf> and its amplification under irradiation of bipolar transistors with fast neutron fluence is proportional to the value of fluence Φ<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</inf>. It is necessary to take into account this correlation when using bipolar transistors as equivalent fast neutron fluence detectors for testing of devices in gamma-neutron fields of static ionizing radiation of nuclear reactor. The extended calibration procedure for semiconductor detectors allowed taking into account the correlation between dose effects and structural damage effects when they were used for reactor radiation metrology, which could reduce the systematic measurement error significantly.