Adsorption and Diffusion of In and Bi Adatoms on (0001) Surfaces of of β-Phase In<sub>2</sub>Se<sub>3</sub> and Bi<sub>2</sub>Se<sub>3</sub>

This paper presents the results of first-principles calculations of the adsorption and diffusion of indium atoms on the (0001) surfaces of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta$</tex>-phase <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{In}_{2} \text{Se}_{3}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Bi}_{2} \text{Se}_{3}$</tex>. Using first principle method, it was found that the hole positions on both surfaces are the most favorable ones for indium adatoms. For bismuth adatoms, the most favorable positions are hollow sites, but hcp and brg positions have a negligible energy difference. Using a nudged elastic band method, we have calculated migration activation barriers for indium and bismuth adatoms on the (0001) surfaces of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{\beta}$</tex>-phase <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{In}_{2} \text{Se}_{3}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Bi}_{2} \text{Se}_{3}$</tex>. The energy barriers for indium (bismuth) atom migration on <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{\beta}$</tex>-phase In <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{2 S e}_{3}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Bi}_{2} \text{Se}_{3}(0001)$</tex> surfaces are <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.153(0.074)$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.158(0.156) \text{eV}$</tex>, respectively. Based on the obtained activation energy values, the dependence of the surface diffusion coefficient on the substrate temperature was calculated. At the room temperature, diffusion length for all adatoms under consideration significantly exceeds the width of terraces on both studied surfaces.

Institutions

Publication Details

Published
2025-06-27
DOI
https://doi.org/10.1109/edm65517.2025.11096788
Primary Topic
Scientific Research and Technology
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Adsorption and Diffusion of In and Bi Adatoms on (0001) Surfaces of of β-Phase In2Se3 and Bi2Se3

Scientific Research and Technology
article

Adsorption and Diffusion of In and Bi Adatoms on (0001) Surfaces of of β-Phase In2Se3 and Bi2Se3

article en

Abstract

This paper presents the results of first-principles calculations of the adsorption and diffusion of indium atoms on the (0001) surfaces of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta$</tex>-phase <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{In}_{2} \text{Se}_{3}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Bi}_{2} \text{Se}_{3}$</tex>. Using first principle method, it was found that the hole positions on both surfaces are the most favorable ones for indium adatoms. For bismuth adatoms, the most favorable positions are hollow sites, but hcp and brg positions have a negligible energy difference. Using a nudged elastic band method, we have calculated migration activation barriers for indium and bismuth adatoms on the (0001) surfaces of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{\beta}$</tex>-phase <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{In}_{2} \text{Se}_{3}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Bi}_{2} \text{Se}_{3}$</tex>. The energy barriers for indium (bismuth) atom migration on <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{\beta}$</tex>-phase In <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{2 S e}_{3}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Bi}_{2} \text{Se}_{3}(0001)$</tex> surfaces are <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.153(0.074)$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.158(0.156) \text{eV}$</tex>, respectively. Based on the obtained activation energy values, the dependence of the surface diffusion coefficient on the substrate temperature was calculated. At the room temperature, diffusion length for all adatoms under consideration significantly exceeds the width of terraces on both studied surfaces.

National Research Tomsk State University (RU), Institute of Semiconductor Physics (RU)
Openalex Percentile: Top 42%
Scientific Research and Technology
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.