Development of IGBT Cell Process Model for Serial Transistors

This paper presents the design of Insulated-Gate Bipolar Transistor cell model with a breakdown voltage of more than <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1200 \mathrm{V}, 75$</tex> A made by using Trench technology. The description of advantages of this technology, physics of device operation, peculiarities of application of additional layers in order to improve the characteristics of IGBT transistors is given. The method of model development describes the technological process of its formation and the results of measuring the main electrical parameters. The research part shows the physics of the device operation used technology mentioned above. During the development of the transistor cell, a special attention is paid to getting the required parameters to prepare the requirements specification for the die manufacturer. The semiconductor structure parameters were determined on the basis of the obtained data and modeling as per the device design rules of the manufacturer. The work has been carried out within the framework of experimental design works on development and mastering of IGBT transistors series at Russian enterprises.