Influence of Generation and Recombination of Oxygen Vacancy-Ion Pairs on Non-Stationary Heat Transfer and Mass Transfer and Their Effect on the Memristor Electrical Properties

The influence of the processes of generation and recombination of oxygen vacancy-ion pairs on the distribution of heat across the active layer of a Ta/Ta<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf>/TiN memristor is studied. These processes are included in a new non-stationary model of heat transfer and charge mass transfer of a formingfree non-filamentary memristor. Generation and recombination play a bigger role in the distribution of vacancies in the material of the memristor within the framework of the non-stationary model, in contrast to the stationary simulations. The nonstationary model provides a current-voltage characteristic that agrees better with experimental data when compared to the stationary model simulations. Furthermore, the model allows to showcase the influence of self-consistent electric field and the overall effect of heat transfer on the electrical properties of the memristor. Additional heat sources from generation and recombination do not contribute significantly in the simulation of heat equation; however, these processes indirectly affect the temperature distribution by way of influencing mass transfer of charge carriers in the system, making their inclusion noteworthy.