Effect of Temperature on the Current-Voltage Characteristics of n GaAs p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y Heterostructures

This paper investigates the electrophysical properties of n-GaAs-p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y heterostructures at different temperatures. The epitaxial n-GaAs-p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ)y grown on GaAs substrates showed p-type conductivity, and their resistivity (5 Ω·cm), charge carrier concentration (ρ = 1.5-10¹⁶ cm-³) and carrier mobility (μ = 300 cm²/V·s) were determined by Hall method. Experimental values of the mobility of the main charge carriers allowed us to determine the mobility of the non-main charge carriers, which amounted to (μ = 1890 cm²/V·s) by means of theoretical calculations. When a voltage in the range of 0.1 to 3 V was applied to the n-GaAs-p-(ZnSe)1-x-y(Ge2)x(GaAs1-δBiδ)y heterostructures, the rectification ratio k = Jdir/Jrev varied between 2000 and 2500, and it was found that the density of surface states at the p-n junction interface remained low. In the current-voltage (I–V) characteristics of the n-GaAs-p-(ZnSe)1-x-y(Ge2)x(GaAs1-δBiδ)y heterostructure, a quadratic dependence of J ~ V² was revealed, and this dependence does not change with increasing temperature in the transition to regions with a sharp increase in current. Analysis of these regions of the volt-ampere characteristic showed that the mechanism of current flow is determined by the direct drift of charge carriers. It was proposed to use n-GaAs-p-(ZnSe)1-x-y(Ge2)x(GaAs1-δBiδ)y heterostructures in voltage amplifiers, constant voltage converters, as well as in electronic and thermoelectronic devices