Double-Side Cooled 3D Package Solution for High Current GaN Half-Bridge Power Module

The paper presents double-side cooled 3D package solution for high current GaN half-bridge power module based on metal board and a ceramic board with through plated vias. This solution is characterized by reduced values of parasitic inductance of the gate and power loops, as well as low junction-to-ambient thermal resistance of package. In the proposed 3D package solution, power GaN transistors and diodes were assembled on a metal board in which the power loop of the module was implemented. Gate driver and passive components were assembled on a ceramic board in which the control and gate loops of the module were implemented. Basing on the double-side cooled 3D package solution high current GaN half-bridge power module was designed with target electrical parameters, such as maximum operating voltage of at least 160 V, an output current of at least 30 A at a switching frequency of 500 kHz. The design of double-side cooled 3D package solution for high current GaN half-bridge power module was verified with steady state current analysis, parasitic extraction and thermal modeling using Ansys. As a result of modelling it was shown, that the design demonstrated current density below 40 A/mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> in most volume of the metal board at maximum current load and power loop parasitic inductance of each half-bridge switch below 1.6 nH. It was shown that the use of metal and ceramic boards with high thermal conductivity provides double-sided heat removal from the power GaN transistors and allows to reach junction-to-ambient thermal resistance of 18 K/W.