Dual-Gate Asymmetric MoS₂ TFETs: Design, Simulation, and Performance Evaluation

The article presents an in-depth examination of the performance attributes of a Dual-Gate Asymmetric MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based Tunnel Field Effect Transistor (DG-AMTFET) with a particular focus on its variation with drain voltage and temperature. The proposed device structure introduces a non-uniform MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> channel to overcome the limitations imposed by the Boltzmann transport equation in traditional field-effect transistors (FETs). Our simulation results indicate that the proposed structure enhances device efficiency by optimizing the ON and OFF states, thereby reducing power consumption. The primary innovation in this work lies in leveraging the bandgap variation in MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> due to its thickness-dependent properties. The device operates under a dual-gate configuration, structured with a high-κ insulating layer (HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>) beneath a polysilicon gate contact, further improving gate control. Results indicate significant improvements in subthreshold swing, ON-state current, and power efficiency, positioning DG-AMTFET as a highly viable candidate for next-generation energy-efficient electronic applications. The continuous demand for energy-efficient transistors has driven the exploration of novel device structures with superior electrostatic control and enhanced performance characteristics. We conceptualize and introduce a MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based Negative Capacitance.