Zero-field Anomalous Hall Effect in Bulk Single Crystal Mn3Ir

The L1_2-phase non-collinear antiferromagnet (AFM) Mn_3Ir has emerged as a pioneering platform for realizing the zero-field anomalous Hall effect (AHE), thereby catalyzing rapid advances in antiferromagnetic spintronics. Despite its significant potential, experimental investigations of the intrinsic magnetic and electronic properties of Mn_3Ir have been greatly hindered by the formidable challenges in growing bulk single crystals. Here, we report the growth of stoichiometric Mn_3Ir bulk single crystals and their characterization in terms of magnetization and the AHE. Using a high-throughput flux method, we obtained (111)-oriented hexagonal Mn_3Ir single crystals. A small AHE signal was detected, which we attribute to the coexistence of A- and B-type antiferromagnetic domains that mutually cancel the net AHE response. Our results reveal key aspects of the intrinsic magnetic properties and AHE in bulk Mn_3Ir, providing a critical material platform for the development of advanced spintronic devices.

Publication Details

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ArXiv.org
Published
2025-09-23
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Mobile Ad Hoc Networks
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article

Zero-field Anomalous Hall Effect in Bulk Single Crystal Mn3Ir

ArXiv.org
Mobile Ad Hoc Networks
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Zero-field Anomalous Hall Effect in Bulk Single Crystal Mn3Ir

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Abstract

The L1_2-phase non-collinear antiferromagnet (AFM) Mn_3Ir has emerged as a pioneering platform for realizing the zero-field anomalous Hall effect (AHE), thereby catalyzing rapid advances in antiferromagnetic spintronics. Despite its significant potential, experimental investigations of the intrinsic magnetic and electronic properties of Mn_3Ir have been greatly hindered by the formidable challenges in growing bulk single crystals. Here, we report the growth of stoichiometric Mn_3Ir bulk single crystals and their characterization in terms of magnetization and the AHE. Using a high-throughput flux method, we obtained (111)-oriented hexagonal Mn_3Ir single crystals. A small AHE signal was detected, which we attribute to the coexistence of A- and B-type antiferromagnetic domains that mutually cancel the net AHE response. Our results reveal key aspects of the intrinsic magnetic properties and AHE in bulk Mn_3Ir, providing a critical material platform for the development of advanced spintronic devices.

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