A Novel AND-Type FinFET Contact RRAM in Pure 7 nm FinFET CMOS Logic Process

This paper reports a new AND-type FinFET Slot Contact RRAM (SCRRAM), designed to be fully compatible with the 7nm FinFET CMOS logic process. Unlike the conventional approaches, our design requires no additional process steps or masks during CMOS logic processes. Featuring an innovative Slot Contact/Metal Gate stacking structure, it incorporates unique self-formed Ti-based Transition Metal Oxide (TMO) that serves as a stable resistive storage node, also offering a robust 10X read window, an ultrahigh memory density of 76Mb/mm², superior cycling and retention reliability. Characterization results demonstrate the potential of SCRRAM as a highly promising solution for high-density embedded memory in the advanced IoT and MCU applications for 7nm FinFET and beyond technology nodes.