Analyzing Variability in Reconfigurable 2D-FET Circuits Using a Physics-Based SPICE Model
We present a physics-based static DC SPICE model for 2D-material-based reconfigurable FETs (RFETs) using our in-house core, which integrates Fermi–Dirac statistics with 2D density of states (DOS) and models transport via thermionic, field emission, and drift-diffusion formalisms. The model takes advantage of its SPICE compatibility by virtue of the Lambert-W function, which renders it compatible with Verilog-A, and is validated through experimental device and inverter characteristics. This is followed by model-based Monte Carlo simulations in Keysight’s ADS for circuit level variability analysis. Subsequently, the implementation of polymorphic NAND/NOR gates using the reconfigurable 2D-FETs is demonstrated for secure circuits.
Institutions
- National Institute of Technology Srinagar (IN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-09-25
- DOI
- https://doi.org/10.1109/led.2025.3614492
- Primary Topic
- Geochemistry and Geologic Mapping
- Type
- article
- Field-Weighted Citation Impact
- 0.00