Analyzing Variability in Reconfigurable 2D-FET Circuits Using a Physics-Based SPICE Model

We present a physics-based static DC SPICE model for 2D-material-based reconfigurable FETs (RFETs) using our in-house core, which integrates Fermi–Dirac statistics with 2D density of states (DOS) and models transport via thermionic, field emission, and drift-diffusion formalisms. The model takes advantage of its SPICE compatibility by virtue of the Lambert-W function, which renders it compatible with Verilog-A, and is validated through experimental device and inverter characteristics. This is followed by model-based Monte Carlo simulations in Keysight’s ADS for circuit level variability analysis. Subsequently, the implementation of polymorphic NAND/NOR gates using the reconfigurable 2D-FETs is demonstrated for secure circuits.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2025-09-25
DOI
https://doi.org/10.1109/led.2025.3614492
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
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article

Analyzing Variability in Reconfigurable 2D-FET Circuits Using a Physics-Based SPICE Model

IEEE Electron Device Letters
Geochemistry and Geologic Mapping
article

Analyzing Variability in Reconfigurable 2D-FET Circuits Using a Physics-Based SPICE Model

article en

Abstract

We present a physics-based static DC SPICE model for 2D-material-based reconfigurable FETs (RFETs) using our in-house core, which integrates Fermi–Dirac statistics with 2D density of states (DOS) and models transport via thermionic, field emission, and drift-diffusion formalisms. The model takes advantage of its SPICE compatibility by virtue of the Lambert-W function, which renders it compatible with Verilog-A, and is validated through experimental device and inverter characteristics. This is followed by model-based Monte Carlo simulations in Keysight’s ADS for circuit level variability analysis. Subsequently, the implementation of polymorphic NAND/NOR gates using the reconfigurable 2D-FETs is demonstrated for secure circuits.

IEEE Electron Device LettersVol. 46(12)
National Institute of Technology Srinagar (IN)
Openalex Percentile: Top 28%
Geochemistry and Geologic Mapping
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Analyzing Variability in Reconfigurable 2D-FET Circuits Using a Physics-Based SPICE Model · IEEE Electron Device Letters (2025) | TGRS Research Map | TGRS