Characterization of the single-event effect induced by heavy ions in 12-nm bulk FinFET SRAM using self-developed automatic particle beam adjusting equipment

A novel equipment which can automatically adjust the LET value of incident heavy ions in irradiation experiments is proposed and implemented in this paper. Based on a commercial 12-nm FinFET SRAM, the dependence of voltage supply on the single-event upset (SEU) sensitivity is studied by experiments using heavy ions with a wide range of effective linear energy transfer (LET) value from 0.476 MeV•cm2/mg to 85.59 MeV•cm2/mg. The results show that at advanced FinFET technology, the SEU cross section increases exponentially with the decrease of supply voltage. Furthermore, single-event hard errors (SEHE) was detected in the 12-nm FinFET technology for the first time.