Embedded growth of visible InP quantum dot lasers in silicon nitride photonic integrated circuits

Integrated photonics using visible light is rapidly emerging as a powerful platform for applications including quantum information, biosensing, and displays. We present heteroepitaxial growth of visible red InP quantum dot lasers within pockets etched into SiN x /Si photonic integrated circuits (PICs) for on-chip light sources and amplifiers. While epitaxial 1.3 µm InAs quantum dot lasers embedded within Si PICs were recently demonstrated, similar integration of red lasers remains unexplored. We achieve a low threshold current density of 450A/cm 2 with emission at 752 nm and uncoupled single-facet output power exceeding 10 mW at room temperature under continuous-wave injection. Although further work is needed to experimentally demonstrate coupling between the embedded lasers and SiN x waveguides, our results represent a critical step toward dense monolithic integration of visible red optical gain on PICs for on-chip applications.