Broadband, High-Performance, and Self-Powered Photodetector Based on a Bi <sub>2</sub> O <sub>2</sub> Se/CdSe Vertical Type-II Heterojunction

Photodetectors based on Bi<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>Se currently suffer from low responsivity, limited detection sensitivity, and insufficient broadband photoresponse capability, which significantly hinders their practical application in high-performance optoelectronic devices. To overcome these limitations, this study designs and fabricates a broadband (300–1300 nm), high-performance photodetector based on a vertically stacked Bi<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>Se/CdSe heterojunction. Under 560 nm illumination and a 5 V bias voltage, the device exhibits a high responsivity of 6.18×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> A/W, an on/off ratio of 1.46×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup>, and a specific detectivity of 1.95×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> Jones. Remarkably, even under zero-bias conditions, the device maintains a responsivity of up to 1.99 A/W, a detectivity of 6.23×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> Jones, and an on/off ratio of 2.52×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup>, demonstrating outstanding self-powered characteristics. This work not only proposes an efficient strategy for constructing high-performance heterojunction that effectively break through the limitations of conventional photodetectors, but also elucidates the critical role of interfacial engineering in enhancing the self-driven behavior of the device, thereby providing a theoretical foundation and technical support for the development of low-power, high-performance photodetection systems.

Institutions

Publication Details

Journal
IEEE Electron Device Letters
Published
2025-09-22
DOI
https://doi.org/10.1109/led.2025.3612875
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Broadband, High-Performance, and Self-Powered Photodetector Based on a Bi 2 O 2 Se/CdSe Vertical Type-II Heterojunction

IEEE Electron Device Letters
Geochemistry and Geologic Mapping
article

Broadband, High-Performance, and Self-Powered Photodetector Based on a Bi 2 O 2 Se/CdSe Vertical Type-II Heterojunction

article en

Abstract

Photodetectors based on Bi<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>Se currently suffer from low responsivity, limited detection sensitivity, and insufficient broadband photoresponse capability, which significantly hinders their practical application in high-performance optoelectronic devices. To overcome these limitations, this study designs and fabricates a broadband (300–1300 nm), high-performance photodetector based on a vertically stacked Bi<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>Se/CdSe heterojunction. Under 560 nm illumination and a 5 V bias voltage, the device exhibits a high responsivity of 6.18×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> A/W, an on/off ratio of 1.46×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup>, and a specific detectivity of 1.95×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> Jones. Remarkably, even under zero-bias conditions, the device maintains a responsivity of up to 1.99 A/W, a detectivity of 6.23×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> Jones, and an on/off ratio of 2.52×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup>, demonstrating outstanding self-powered characteristics. This work not only proposes an efficient strategy for constructing high-performance heterojunction that effectively break through the limitations of conventional photodetectors, but also elucidates the critical role of interfacial engineering in enhancing the self-driven behavior of the device, thereby providing a theoretical foundation and technical support for the development of low-power, high-performance photodetection systems.

IEEE Electron Device LettersVol. 46(11)
Yunnan Normal University (CN)
Openalex Percentile: Top 31%
Geochemistry and Geologic Mapping
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.