Broadband Thin-Film Lithium Niobate Modulator Module Capable of 390 Gb/s Operation

Wideband electro-optic modulators are key components in high-speed data transmission systems. Microwave resonances induced by packaging-related parasitic modes can significantly degrade the bandwidth performance of modulator modules. In this work, we present a high-performance thin-film lithium niobate (TFLN) modulator module featuring a 1.0-mm coaxial connector. The module contains a TFLN modulator chip employing low-k underfill to exhibit an ultra-wide bandwidth exceeding 110 GHz. A series of parasitic-mode suppression strategies are incorporated to ensure resonance-free frequency response for the packaged module, including inner slow-wave electrodes for flexible microwave input layout, a quartz-based grounded coplanar waveguide (GCPW) feedline with metal vias, a parasitic mode suppressor micromachined into the Kovar housing, and short-circuit bonding wires. The packaged modulator module exhibits a flat frequency response with an electro-optic bandwidth of 100 GHz, and supports high-speed data transmission of 130 Gbaud eight-level pulse amplitude modulation (PAM8) over 500 m of standard single-mode fiber in the O-band, corresponding to a maximum data rate of 390 Gbps. This demonstration validates the potential of our module for ultra-high-speed optical communications.

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Publication Details

Journal
Journal of Lightwave Technology
Published
2025-09-12
DOI
https://doi.org/10.1109/jlt.2025.3609784
Citations
1
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
2.48
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article

Broadband Thin-Film Lithium Niobate Modulator Module Capable of 390 Gb/s Operation

1 citations
Journal of Lightwave Technology
Geochemistry and Geologic Mapping
2.48
article

Broadband Thin-Film Lithium Niobate Modulator Module Capable of 390 Gb/s Operation

article en
1 citations

Abstract

Wideband electro-optic modulators are key components in high-speed data transmission systems. Microwave resonances induced by packaging-related parasitic modes can significantly degrade the bandwidth performance of modulator modules. In this work, we present a high-performance thin-film lithium niobate (TFLN) modulator module featuring a 1.0-mm coaxial connector. The module contains a TFLN modulator chip employing low-k underfill to exhibit an ultra-wide bandwidth exceeding 110 GHz. A series of parasitic-mode suppression strategies are incorporated to ensure resonance-free frequency response for the packaged module, including inner slow-wave electrodes for flexible microwave input layout, a quartz-based grounded coplanar waveguide (GCPW) feedline with metal vias, a parasitic mode suppressor micromachined into the Kovar housing, and short-circuit bonding wires. The packaged modulator module exhibits a flat frequency response with an electro-optic bandwidth of 100 GHz, and supports high-speed data transmission of 130 Gbaud eight-level pulse amplitude modulation (PAM8) over 500 m of standard single-mode fiber in the O-band, corresponding to a maximum data rate of 390 Gbps. This demonstration validates the potential of our module for ultra-high-speed optical communications.

Journal of Lightwave TechnologyVol. 43(22)
Tsinghua University (CN)
Affordable and clean energy
Openalex Percentile: Top 7%
Geochemistry and Geologic Mapping
2.48
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Broadband Thin-Film Lithium Niobate Modulator Module Capable of 390 Gb/s Operation · Journal of Lightwave Technology (2025) | TGRS Research Map | TGRS