Source field plate addition on deep depletion diamond MOSFET to increase the breakdown up to 850 V

Publication Details

Journal
SPIRE - Sciences Po Institutional REpository
Published
2025-08-31
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
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article

Source field plate addition on deep depletion diamond MOSFET to increase the breakdown up to 850 V

SPIRE - Sciences Po Institutional REpository
Geochemistry and Geologic Mapping
article

Source field plate addition on deep depletion diamond MOSFET to increase the breakdown up to 850 V

article en

Abstract

No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Openalex Percentile: Top 49%
Geochemistry and Geologic Mapping
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Source field plate addition on deep depletion diamond MOSFET to increase the breakdown up to 850 V · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS