Investigation of mechanical stresses in β-Ga

The wide range of possible applications of gallium oxide as a modern and promising material in the semiconductor industry necessitates further research into low-cost methods for growing thin films from this material, particularly on non-native substrates. One way to mitigate imperfections in Ga2O3 films caused by structural and lattice parameter mismatches with the substrate material is the use of substrates with porous surfaces. In this study, β-Ga2O3 films of 1 µm thickness were deposited on a porous Si/Si substrate using RF magnetron sputtering. Raman scattering and XRD analyses demonstrate the high quality of the obtained gallium oxide film. The magnitude of the residual mechanical stress was quantitatively evaluated, yielding values of 1.4 GPa and 1.8 GPa based on the analysis of XRD data and Raman spectroscopy, respectively.