Supplementary Material for "Free-carrier screening unlocks high electron mobility in ultrawide bandgap semiconductor CaSnO3"

Details of the convergence tests and a more comprehensive description of our computational methods for transport calculations including free-carrier screening and ionized impurity scattering.

Publication Details

Journal
AIP Publishing
Published
2025-09-04
DOI
https://doi.org/10.60893/figshare.apl.29924345
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
0.00
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article

Supplementary Material for "Free-carrier screening unlocks high electron mobility in ultrawide bandgap semiconductor CaSnO3"

AIP Publishing
Geochemistry and Geologic Mapping
article

Supplementary Material for "Free-carrier screening unlocks high electron mobility in ultrawide bandgap semiconductor CaSnO3"

article en

Abstract

Details of the convergence tests and a more comprehensive description of our computational methods for transport calculations including free-carrier screening and ionized impurity scattering.

AIP Publishing
Openalex Percentile: Top 53%
Geochemistry and Geologic Mapping
DOIOpen Access PDFOpenAlex
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Supplementary Material for "Free-carrier screening unlocks high electron mobility in ultrawide bandgap semiconductor CaSnO3" · AIP Publishing (2025) | TGRS Research Map | TGRS