Dynamic Transient Analysis and Adaptive Calibration of GaN-Based Power MOSFETs using Hybrid Finite Element and Reduced-Order Modeling Techniques for High-Frequency Applications

**Abstract:** This paper presents a novel methodology for efficiently and accurately analyzing the dynamic transient behavior and optimizing performance calibration of GaN-based power MOSFETs operating at high frequencies (>1 MHz). Traditional techniques, such as full transient finite element analysis (FEA), become computationally prohibitive at these frequencies. We propose a hybrid approach combining a full FEA for initial structure and parameter extraction with a reduced-order modeling (ROM) framework trained using Proper Orthogonal Decomposition (POD) to accelerate subsequent transient simulations and adaptive calibration routines. The ROM allows for real-time evaluation of different device geometries, gate drive profiles, and process variations, leading to optimized designs for specific high-frequency power conversion applications. We demonstrate the efficacy of this hybrid methodology through a comprehensive series of simulations, showing a 10x reduction in computational time compared to pure FEA while maintaining comparable accuracy. This approach directly addresses the challenges in efficient GaN device design and enables rapid exploration of design space for optimal performance.