3D Mathcad Simulation of Photovoltage in C-Si Solar Cells Under Multispectral Illumination: Combined Effect of Transverse Magnetic Field and Base Thickness

This study investigates the influence of an external magnetic field on the photovoltage of bifacial polycrystalline silicon photovoltaic (PV) cells with varying base thicknesses, under different illumination conditions (front-side, rear-side, and simultaneous dual-face). Numerical simulations were performed for base thicknesses ranging from 100 μm to 400 μm in 50 μm increments, considering both open-circuit and short-circuit regimes. The analysis incorporates the effect of carrier collection velocity at the p–n junction as well as constant and variable magnetic field intensities. The results reveal that, for open-circuit conditions, the photovoltage generally increases slightly with magnetic field intensity, at a rate of approximately 10 mV per decade, regardless of base thickness, in agreement with previous experimental and simulation studies. This enhancement is attributed to a marginal reduction in bulk recombination losses due to the Lorentz force. In contrast, under short-circuit conditions, the photovoltage decreases nearly linearly with increasing magnetic field, with similar slopes across all thicknesses, indicating a transport-dominated recombination mechanism. For rear-side and dual-face illumination, the trends are similar, though rear-side contributions decrease with base thickness due to absorption and transport losses. The magnetic field effects are primarily linked to modifications of transport parameters such as diffusion length and diffusion coefficient, rather than purely optical effects. These findings provide insights into the interplay between magnetic fields, recombination dynamics, and illumination configuration, offering potential guidance for the design of PV devices in environments where magnetic fields are present.