INVESTIGATING TEMPERATURE AND CONCENTRATION DEPENDENCY OF THE BANDGAP ENERGY OF SEMICONDUCTORS

Abstract This study explores the effects of temperature and dopant concentration on the band gap energy of semiconductors, which are critical parameters influencing their electronic and optical properties. Using a combination of experimental techniques and theoretical modeling, the researcher investigated the band gap variations in intrinsic and extrinsic semiconductors across a temperature range of 100 𝑘 to 500 𝑘 and varying dopant concentrations. Results demonstrate a clear inverse relationship between temperature and band gap energy, attribute to lattice expansion and electronphonon interactions. This study investigated the temperature and concentration dependence of the band gap energy in semi-conductors. Specially, it explored how temperature affects the band gap of various semiconductors materials, including low-dimensional hetero structures and ternary alloys, and how changes in dopant concentration modify the band gap. Empirical equations and theoretical models are used to explain the observed variations, and experimental data from transmission spectroscopy and other methods is compared with the predictions. 7