Thermally oxidized nickel oxide films for the development of high performance nonvolatile bipolar resistive random-access memories

This study demonstrates that a Ag/NiO x /Si RRAM employing a thermally oxidized NiO x switching layer exhibits excellent performance and outstanding device-to-device uniformity.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2025-01-01
DOI
https://doi.org/10.1039/d5tc01724f
Citations
1
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
2.48
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article

Thermally oxidized nickel oxide films for the development of high performance nonvolatile bipolar resistive random-access memories

1 citations
Journal of Materials Chemistry C
Geochemistry and Geologic Mapping
2.48
article

Thermally oxidized nickel oxide films for the development of high performance nonvolatile bipolar resistive random-access memories

article en
1 citations

Abstract

This study demonstrates that a Ag/NiO x /Si RRAM employing a thermally oxidized NiO x switching layer exhibits excellent performance and outstanding device-to-device uniformity.

Journal of Materials Chemistry CVol. 13(37)
National Yunlin University of Science and Technology (TW)
Openalex Percentile: Top 7%
Geochemistry and Geologic Mapping
2.48
DOISourceOpenAlex
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Thermally oxidized nickel oxide films for the development of high performance nonvolatile bipolar resistive random-access memories · Journal of Materials Chemistry C (2025) | TGRS Research Map | TGRS