54‐3: <i>Invited Paper:</i> IGZO‐Based Synaptic Transistors for Neuromorphic Applications

In this paper, we introduced indium‐gallium‐zinc oxide (IGZO) synaptic transistors based on charge trapping. By employing a degenerate IGZO trap layer, electron de‐trapping efficiency was significantly improved. Additional process optimization was conducted to address the insufficient device characteristics as a synapse, resulting in notable improvements in program/erase and retention performance. The optimized device exhibits improved electrical characteristics, highlighting their potential as promising candidates for neuromorphic applications.