Graphene Nanoribbon Based Asymmetric Tunnel FET for Fast Switching and Low Power Applications

Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)

Publication Details

Journal: Journal of Nano- and Electronic Physics
Published: 2025-01-01
DOI: https://doi.org/10.21272/jnep.17(3).03014
Citations: 1
Primary Topic: Geochemistry and Geologic Mapping
Type: article
Field-Weighted Citation Impact: 2.48

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article

Graphene Nanoribbon Based Asymmetric Tunnel FET for Fast Switching and Low Power Applications

Jan 1, 2025

1 citations

Journal of Nano- and Electronic Physics

Geochemistry and Geologic Mapping

2.48

article

Graphene Nanoribbon Based Asymmetric Tunnel FET for Fast Switching and Low Power Applications

January 1, 2025article en

1 citations

Abstract

Journal of Nano- and Electronic PhysicsVol. 17(3)

Affordable and clean energy

Openalex Percentile: Top 7%

Geochemistry and Geologic Mapping

2.48

DOI Open Access PDF OpenAlex

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Graphene Nanoribbon Based Asymmetric Tunnel FET for Fast Switching and Low Power Applications · Journal of Nano- and Electronic Physics (2025) | TGRS Research Map | TGRS