94‐6: Low‐Thermal‐Stress TGV Leadless Wafer‐Level‐Package for MEMS High‐Temperature Pressure Sensors

Due to high insulation, low cost and low thermal stress of glass wafer, glass is considered as a promising material for advanced package in MEMS sensor. In this paper, a low‐thermal‐stress Silicon on insulator high temperature pressure sensor was developed by using TGV interconnect technology and glass‐based wafer‐level packaging technology.

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Publication Details

Journal
SID Symposium Digest of Technical Papers
Published
2025-06-01
DOI
https://doi.org/10.1002/sdtp.18426
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
0.00
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article

94‐6: Low‐Thermal‐Stress TGV Leadless Wafer‐Level‐Package for MEMS High‐Temperature Pressure Sensors

SID Symposium Digest of Technical Papers
Geochemistry and Geologic Mapping
article

94‐6: Low‐Thermal‐Stress TGV Leadless Wafer‐Level‐Package for MEMS High‐Temperature Pressure Sensors

article en

Abstract

Due to high insulation, low cost and low thermal stress of glass wafer, glass is considered as a promising material for advanced package in MEMS sensor. In this paper, a low‐thermal‐stress Silicon on insulator high temperature pressure sensor was developed by using TGV interconnect technology and glass‐based wafer‐level packaging technology.

SID Symposium Digest of Technical PapersVol. 56(1)
BOE Technology Group (China) (CN)
Openalex Percentile: Top 68%
Geochemistry and Geologic Mapping
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94‐6: Low‐Thermal‐Stress TGV Leadless Wafer‐Level‐Package for MEMS High‐Temperature Pressure Sensors · SID Symposium Digest of Technical Papers (2025) | TGRS Research Map | TGRS