P‐148: Photolithography‐Based Micropatterning Integration of Quantum‐Dot Electroluminescent Displays with Nonvolatile Charge Trap Memory

A memory‐in‐pixel (MIP) is demonstrated using non‐volatile charge trap memory with an Al2O3/HfO2/Al2O3 (AHA) structure and integrated quantum dot light‐emitting diodes (QDLED). The AHA structure exhibits high charge trapping capacity, achieving a 4.7 V memory window, Ion/off ratio of 108. The integration of QD‐LED enables a self‐erasing functionality via the photovoltaic effect without an external light source.