P‐7: High‐Reliability LTPS‐TFT with Super‐Low Gate Resistivity

This study explores the adoption of low‐resistance gate wiring metals to enhance the scalability and functionality of LTPS‐TFT displays. By using aluminum (Al) as the gate metal material, we were able to reduce the resistivity of about 1/5 of the conventional level. The reliability of LTPS‐TFTs was significantly enhanced by incorporating a well‐designed light‐shield layer.

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Publication Details

Journal
SID Symposium Digest of Technical Papers
Published
2025-06-01
DOI
https://doi.org/10.1002/sdtp.18456
Primary Topic
Geochemistry and Geologic Mapping
Type
article
Field-Weighted Citation Impact
0.00
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article

P‐7: High‐Reliability LTPS‐TFT with Super‐Low Gate Resistivity

SID Symposium Digest of Technical Papers
Geochemistry and Geologic Mapping
article

P‐7: High‐Reliability LTPS‐TFT with Super‐Low Gate Resistivity

article en

Abstract

This study explores the adoption of low‐resistance gate wiring metals to enhance the scalability and functionality of LTPS‐TFT displays. By using aluminum (Al) as the gate metal material, we were able to reduce the resistivity of about 1/5 of the conventional level. The reliability of LTPS‐TFTs was significantly enhanced by incorporating a well‐designed light‐shield layer.

SID Symposium Digest of Technical PapersVol. 56(1)
Japan Display (Japan) (JP), Mi Corporation (United States) (US)
Openalex Percentile: Top 69%
Geochemistry and Geologic Mapping
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P‐7: High‐Reliability LTPS‐TFT with Super‐Low Gate Resistivity · SID Symposium Digest of Technical Papers (2025) | TGRS Research Map | TGRS