P‐87: Cost‐Effective, High‐k AlOx Dielectric by Spray Pyrolysis for LTPS and Oxide Thin‐Film Transistors

We present a cost‐effective spray pyrolysis method to develop high‐k AlOx dielectric films for LTPS and IGO TFTs. The AlOx film shows a dielectric constant of 8.46 and a breakdown voltage of 9.25 MV/cm. Short‐channel p‐type LTPS and n‐type IGO TFTs with AlOx exhibit field‐effect mobilities of 90 and 23 cm²/V•s, respectively.