70‐4: A Novel Fabrication Process for Enhancing the Reliability of IGZO Thin Film Transistor

This study presents the impact of IGZO/GI interface contamination and carrier fluctuations within IGZO due to the fabrication process of indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs) with a top‐gate structure To address these challenges and improve device reliability, a novel island‐shaped gate‐insulated (I‐GI) structure, passivated with a silicon oxide (SiOₓ) thin film, is proposed Experimental results show that the I‐GI structure significantly enhances both electrical stability and reliability compared to the conventional reference structure. The newly developed design demonstrates substantial improvements in device stability under various operational conditions. These results confirm that the I‐GI structure effectively reduces front‐channel contamination while preserving the carrier concentration within the IGZO layer, ensuring consistent and reliable device performance without fluctuations during the fabrication process.