Pengaruh Penggunaan Doping Vanadium dan Zat Aditif Dithenalomine (DEA) Terhadap Energi Celah Pita SnO2

The high band gap energy in the SnO2 semiconductor makes its photocatalytic activity not optimal. Bandgap energy is a combination of the valence band and conduction band in a semiconductor. Doping andadditives are added to SnO2 because they can reduce the band gap energy of SnO2 thereby increasingits photocatalytic activity because it only requires low energy for excited electrons. The research aims tosee the effect of using vanadium doping and the additive Diethanolamine (DEA) on reducing the band gapenergy of SnO2. The synthesis method used in this research was the Sol-gel method. The SnO2 synthesisresults can be characterized using a Diffuse-Reflectance Spectrophotometer (UV-DRS). The results showthat pure SnO2 has a band gap energy of 3.48 eV, while SnO2 that has been doped and added withadditives has a band gap energy of 2.25 eV. Vanadium and DEA have been proven to be able to reducethe band gap energy of SnO2 so that it can be used as a photocatalyst material