P‐12: Achieving High‐Performance Ln‐IZO TFT with Top‐Gate Self‐Aligned Structure on Large Substrates

This paper discusses the strategy for achieving high performance Ln‐IZO TFT utilizing a top‐gate self‐aligned (TGSA) structure on a G8.6 glass substrate. We examined the PECVD process of the GI layer, focusing on plasma power and post‐treatment, to reduce the interface trap states between the GI and active layer. The premium Ln‐IZO TFT exhibited a mobility of 47.3 cm²/Vs, a subthreshold swing (SS) of 0.30, a threshold voltage (Vth) of 0.35 V, and an on/off current ratio (Ion/Ioff) of 2.3×10 9 . The BTS stability of Ln‐IZO TFT is also within 1.0 V (PBTS = 0.76 V, NBTIS = 0.48 V), indicating significant market potential for next‐generation display devices.