74‐3: <i>Invited Paper:</i> Polycrystalline Indium Oxide Thin‐Film Transistors formed by Solid‐Phase Crystallization

We demonstrate polycrystalline indium oxide (poly‐InOx:H) thin‐film transistors (TFTs) with bottom‐gate (BG) and selfaligned top‐gate (SATG) structures. The poly‐InO x :H channel was formed by low‐temperature solid‐phase crystallization of a hydrogen‐doped amorphous InOx:H film. Both BG and SATG poly‐InOx:H TFTs operated in enhancement mode with fieldeffect mobilities of 32.0 cm 2 V −1 s −1 for BG and 29.5 cm 2 V −1 s −1 for SATG. Furthermore, the poly‐InO x :H TFTs exhibited excellent stability under a negative gate bias and temperature stress, irrespective of the TFT structure. These results demonstrate that poly‐oxide is a strong candidate for opening a new route to improve the mobility and reliability of oxide TFTs.