62‐1: <i>Distinguished Student Paper:</i> Normally Off Top‐Gate Self‐Aligned Field‐Effect Transistor Using Crystal InO _<i>x</i> with Field‐Effect Mobility of Around 100 cm ² /Vs

In this study, we designed and fabricated a crystal InOx‐based transistor on a 3.5th generation glass (600 mm × 720 mm) substrate line. The transistor exhibits high field‐effect mobility around 100 m 2 /Vs, an on‐state current higher than that of a low‐ temperature polysilicon‐based transistor, normally‐off characteristics, and high reliability. By combining our organic light‐emitting diode (OLED) patterning technology, we obtained an 8K4K OLED display with high luminance and low power consumption.