18‐2: Efficient Methodology for Increasing Atomic Layer Deposition Throughput by Optimizing Deposition Rate of SiO2 Film

Low deposition rate limited the mass production of atomic layer deposition in display manufacturing. In this work, a 29% enhancement in the deposition rate was achieved through the optimization of process parameters and the selection of precursors, thereby fulfilling the requirement of the tact time in production fabrication. The application of ALB was expanded through the study of the growth mechanism of SiO 2 films.