P‐149: Monolithic Integration of <i>p</i> ‐type MOSFET and MicroLEDs for AR/VR/XR Display

We report a monolithically integrated voltagecontrolled p‐ type metal‐oxide‐semiconductor field effect transistor (p‐MOSFET)‐Micro‐LED device based on commercial GaN LED epitaxial wafer. By adjusting the Gate voltage, the effective control of Micro‐LED injection current is realized. The I ds on/off ratio is around 10 4 , and the gate leakage current (I gs ) remains below 10 ‐9 A as V gs increases up to ‐25 V.

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Publication Details

Journal
SID Symposium Digest of Technical Papers
Published
2025-06-01
DOI
https://doi.org/10.1002/sdtp.18612
Primary Topic
Geochemistry and Geologic Mapping
Type
article
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article

P‐149: Monolithic Integration of p ‐type MOSFET and MicroLEDs for AR/VR/XR Display

SID Symposium Digest of Technical Papers
Geochemistry and Geologic Mapping
article

P‐149: Monolithic Integration of p ‐type MOSFET and MicroLEDs for AR/VR/XR Display

article en

Abstract

We report a monolithically integrated voltagecontrolled p‐ type metal‐oxide‐semiconductor field effect transistor (p‐MOSFET)‐Micro‐LED device based on commercial GaN LED epitaxial wafer. By adjusting the Gate voltage, the effective control of Micro‐LED injection current is realized. The I ds on/off ratio is around 10 4 , and the gate leakage current (I gs ) remains below 10 ‐9 A as V gs increases up to ‐25 V.

SID Symposium Digest of Technical PapersVol. 56(1)
Southern University of Science and Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 69%
Geochemistry and Geologic Mapping
DOISourceOpenAlex
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P‐149: Monolithic Integration of <i>p</i> ‐type MOSFET and MicroLEDs for AR/VR/XR Display · SID Symposium Digest of Technical Papers (2025) | TGRS Research Map | TGRS