P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors

We report a chloroform treatment method to reduce oxygen vacancies (V o ) and hydroxyl group (‐OH) defects in oxide semiconductor thin film for short channel length thin‐film transistor (TFT). This method is very simple and cost‐effective. The reduction of V o and ‐OH group defects after chloroform treatment is confirmed by XPS measurement. We fabricated short channel coplanar c‐IGTO and amorphous InGaO (a‐IGO) TFTs with/without chloroform treatment. The average VTH shifted from ‐9.9 V to ‐0.8 V and the average SS decreased from 0.39 to 0.33 Vdec‐1 for the 0.8 µm c‐IGTO TFTs. The positive bias temperature stress (PBTS) test results are excellent after treatment.