40‐1: A Study on Less Mask Process of Metal Insulator Metal Storage Cap Doping

In this work, the storage cap was formed by doping poly Si under the gate insulator in the contact hole process without using the storage cap doping mask. Using SIMS analysis, it was confirmed that boron was injected into Poly Si by passing through the gate metal, and by measuring the CV curve of Poly Si‐GI‐Gate Cap, it succeeded in securing flat MIM characteristics. In addition using Half‐tone process, the problem of circuit short Poly Si, Poly Si‐GI short that may occur, and the scan signal RC delay problem caused by the thinning of the gate line have been solved. Process architecture with high process capability were used instead of difficult and low yields, and It was constructed without side effects that could not be applied to the products.