5‐2: Efficient Top Emission Light‐Emitting Diode Based on Cadmium‐Free Quantum Dots

Quantum Dot Light‐Emitting Diodes (QLEDs) have attracted widespread concern from both academia and industry due to their advantages on high color gamut and resolution. In recent years, one of the main difficulties for QLED display technology is to replace cadmium based quantum dots, which have high toxicity. Indium phosphide (InP) and zinc selenide (ZnSe) materials are counted as the most promising alternative ones for red‐green‐blue quantum dots, respectively. In this paper, we simulated the frontal emission of top emission (TE) QLED devices and verified the implications of each functional layer thickness for emission spectrum of QLEDs. Finally, by adjusting the structure of QLED devices at electrical and optical aspects, we obtained TE QLED devices with distinguished light extraction efficiency and carrier injection balance, exhibiting higher current efficiency and narrower full width at half maximum.